首页> 外文会议>IEEE International Symposium on the Applications of Ferroelectrics >Effect of Sr substitution on tunability and dielectric properties in Pb(Zr0.50Ti0.50)O3 thin films fabricated by chemical solution deposition
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Effect of Sr substitution on tunability and dielectric properties in Pb(Zr0.50Ti0.50)O3 thin films fabricated by chemical solution deposition

机译:SR取代对化学溶液沉积制造的Pb(Zr0.50Ti0.50)O3薄膜可随疗性和电介质性能的影响

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(Pb1??xSrx)(Zr0.5Ti0.5)O3 ( x= 0 to 0.65) thin films were grown on Pt/TiO2/SiO2/Si substrates by chemical solution deposition. Films were crystallized in the single phase perovskite structure in the temperature range ( 550??700?°C). Dielectric constant and loss tangent at room temperature reduced as the percentage of Sr substitution increased at the A-site of this perovskite structure. The phase transition temperature (Tc) lowered with Sr-substitution and Tc below the room temperature was obtained for composition with Sr ?? 40%. The room temperature tunability reduced with Sr substitution, however, the k-factor slightly improved.
机译:(PB1 ?? XSRX)(Zr0.5Ti0.5)O3(x = 0至0.65)通过化学溶液沉积在Pt / TiO 2 / SiO 2 / Si基材上生长薄膜。薄膜在温度范围内的单相钙钛矿结构中结晶(550 ?? 700℃)。随着在该钙钛矿结构的A现场增加SR取代的百分比,室温下的介电常数和损失切线降低。用Sr替换和低于室温下降的相转变温度(Tc)得到了与sr的组合物40%。然而,室温可调性随着SR替代而减少,但K因子略微改善。

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