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Microscopic Recombination Kinetics in High Quality, Fully Coalesced a-plane GaN ELO Structures Investigated by ps-time-resolved Cathodoluminescence Microscopy

机译：高质量的微观重组动力学，通过PS - 时间分离的阴极致发光显微镜研究了全耦合的A平面GaN Elo结构

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The recombination kinetics of the free exciton (FX) and basal plane stacking fault (BSF) emission in a-plane GaN epitaxial lateral overgrowth structures is analyzed by ps-time-resolved cathodoluminescence microscopy in the temperature range from 5K to 300K. The capture of FX by donors and the thermionic emission of holes from the BSF Quantum Well is analyzed.

机译：通过PS - 时间分辨的阴极发光显微镜在5k至300k的温度范围内分析了平面GaN外延横向过度生长结构的自由激子（FX）和基底平面堆叠故障（BSF）发射的重组动力学。分析了供体的捕获和来自BSF量子孔的孔的热离子发射。

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《International Nano-Optoelectronics Workshop》|2008年||共2页
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Barbara Bastek; Frank Bertram; Juergen Christen; Tim Wernicke; Markus Weyers; Michael Kneissl;
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专利

1. A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy [J] . B. Bastek, F. Bertram, J. Christen, Applied Physicsletters . 2008,第21期

机译：A面GaN外延横向过生长结构：通过阴极荧光显微镜直接成像的生长域，形态缺陷和杂质掺入
2. Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence [J] . Journal of Applied Physics . 2010,第4期

机译：皮秒光子和阴极发光探测的a平面（Al，Ga）N / GaN量子阱中的激子复合动力学
3. Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence [J] . P. Corfdir, P. Lefebvre, L. Balet, Journal of Applied Physics . 2010,第4期

机译：皮秒光子和阴极发光探测的a平面（Al，Ga）N / GaN量子阱中的激子复合动力学
4. Microscopic Recombination Kinetics in High Quality, Fully Coalesced a-plane GaN ELO Structures Investigated by ps-time-resolved Cathodoluminescence Microscopy [C] . Barbara Bastek, Frank Bertram, Juergen Christen, International Nano-Optoelectronics Workshop . 2008

机译：高质量的微观重组动力学，通过PS - 时间分离的阴极致发光显微镜研究了全耦合的A平面GaN Elo结构
5. Nanoscale Electronic Properties in GaN Based Structures for Power Electronics Using Electron Microscopy [D] . Alugubelli, Shanthan Reddy. 2019

机译：基于GaN的纳米级电子特性使用电子显微镜电力电子器件
6. Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy [O] . Ling Sang, Qin Sheng Zhu, Shao Yan Yang, 2014

机译：X射线光发射光谱法测量的非极性A面GaN / AlN和AlN / GaN异质结构的能带偏移
7. Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence. [O] . Corfdir, P., Lefebvre, Pierre, Balet, Laurent, 2010

机译：皮秒光子和阴极发光探测的a平面（Al，Ga）N / GaN量子阱中的激子复合动力学。

Microscopic Recombination Kinetics in High Quality, Fully Coalesced a-plane GaN ELO Structures Investigated by ps-time-resolved Cathodoluminescence Microscopy

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