Microscopic kinetics of capture, relaxation and recombination in ZnO- and GaN-based wide gap semiconductor nano-structures: nm-spatially- and ps-time-resolved cathodoluminescence spectroscopy

摘要

The unique potential of cathodoluminescence microscopy combining high spectral (δλ < 0.02 nm), spatial (δx < 45 nm), and time (δt < 35 ps) resolution enables direct access to the nano-scale properties of semiconductors.