Laser Spectroscopy of Wide Bandgap Semiconductors.

机译：宽带隙半导体的激光光谱学。

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This report presents a definitive determination of the valence band structure of ZnTe. It also shows the utility of spontaneous spin-flip scattering of laser light for such determinations where EPR fails. (Author)

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scott,james f.;
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年度 1975
页码 1-19
总页数 19
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductors; Spin flip lasers; Spectroscopy; Zinc tellurides; Group II-VI compounds; Scattering; Light emitting diodes; Solar cells; Valence bands; Lasers; Laser spectroscopy; Band gap;

机译：半导体;自旋翻转激光器;光谱学;碲化锌; II-VI族化合物;散射;发光二极管;太阳能电池;价带;激光器;激光光谱学;带隙;

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3. Surface Photovoltage Spectroscopy over Wide Time Domains for Semiconductors with Ultrawide Bandgap: Example of Gallium Oxide [J] . Thomas Dittrich, Steffen Fengler, Norbert Nickel Physica status solidi (a) Applications and materials science . 2021,第18期

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7. Optical and electrical properties of III-V nitride wide bandgap semiconductors. Annual report, April 1, 1997--May 31, 1998 [O] . 1998

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8. Laser Light Scattering from Electrons and Phonons in Wide Bandgap Semiconductors. [R] . scott, j. f. 1975

机译：宽带隙半导体中电子和声子的激光散射。

Laser Spectroscopy of Wide Bandgap Semiconductors.

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