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Time-Resolved Luminescence of Epitaxial InP Nanowires on (111)Si

机译：在（111）Si的外延InP纳米线的时间分辨发光

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We observe a biexponential photoluminescence decay process of as-grown InP nanowires on a (111) silicon substrate. The decay characteristics can be explained through the effects of surface states.

机译：我们观察到（111）硅衬底上的生长InP纳米线的Biexponential光致发光衰减过程。可以通过表面状态的影响来解释衰减特征。

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《International Nano-Optoelectronics Workshop 》|2007年||共2页
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Shanna Crankshaw; Stephan Reitzenstein; Linus C. Chuang; Michael Moewe; Steffen Munch; Carolin Hofmann; Alfred Forchel; Connie Chang-Hasnain;
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专利

1. Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale [J] . Zhang Guoqiang, Tateno Kouta, Sogawa Tetsuomi, Nanotechnology . 2018 ,第15期

机译：在INP / InAs异质结构纳米线上的直径定制的电信带发光在INP（111）B底板上生长，具有从Microscale到纳米级的连续调制的直径
2. Heteroepitaxial metalorganic vapor phase epitaxial growth of InP nanowires on GaP(111)B [J] . Y. Watanabe, S. Bhunia, S. Fujikawa, Thin Solid Films . 2004 ,第Oct期

机译：GaP（111）B上InP纳米线的异质外延金属有机气相外延生长
3. Molecular beam epitaxial growth of high quality Ga-catalyzed GaAs_(1-x)Sb_x(x > 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7μm [J] . Deshmukh Prithviraj, Sharma Manish, Nalamati Surya, Semiconductor science and technology . 2018 ,第12期

机译：Si（111）上高质量Ga催化的GaAs_（1-x）Sb_x（x> 0.8）纳米线的分子束外延生长，光致发光发射达到1.7μm
4. Time-Resolved Luminescence of Epitaxial InP Nanowires on (111)Si [C] . Crankshaw, Shanna, Reitzenstein, . 2007

机译：（111）Si上外延InP纳米线的时间分辨发光
5. Part I. Highly sensitive hybridization assays for prostate-specific antigenmRNA based on time-resolved fluorescence and bioluminescence. Part II. Fluorometric and time-resolved immunofluorometric assays for protein-tyrosine phosphatase and kinase activity. [D] . Galvan, Barbara. 1996

机译：第一部分：基于时间分辨荧光和生物发光的前列腺特异性抗原mRNA的高灵敏杂交检测。第二部分用于蛋白质酪氨酸磷酸酶和激酶活性的荧光测定法和时间分辨免疫荧光测定法。
6. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition [O] . Jeung Hun Park, Marta Pozuelo, Bunga P. D. Setiawan, 2016

机译：金属有机化学气相沉积在InP（111）B上In（As）P纳米线的自催化生长和表征
7. Polarized photoluminescence from single wurtzite InP/InAs/InP core-multishell nanowires [O] . Masumoto Yasuaki, Hirata Yuuki, Mohan Premila, 2011

机译：纤锌矿InP / InAs / InP核-多壳纳米线的偏振光致发光

Time-Resolved Luminescence of Epitaxial InP Nanowires on (111)Si

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