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Plasma nitriding of Ti6Al4V alloy and AISI M2 steel substrates using D.C. glow discharges under a triode configuration

机译:使用D.C的Ti6Al4V合金和AISI M2钢基板的等离子体氮化。在三极管配置下发光放电

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Plasma nitriding of different substrates such as Ti6Al4V and AISI M2 steel was achieved by means of D.C. glow discharges assisted by thermionic emission (triode configuration). The higher ionisation levels achieved using a D.C. triode configuration reduced the treatment time and nitriding temperature required to obtain hard and reasonably deep nitrided cases in the Ti6Al4V alloy. For this alloy, surface hardness values of 560–600 HV0.05 and nitrided layer depths of 30–40 Am were achieved at 700 -C. Up to this nitriding temperature, hardening seemed to be mainly accomplished by incorporation of nitrogen in the a-Ti phase, as the formation of a titanium nitride layer on the surface could not be detected by SEM. For the AISI M2 steel, hard (1379–1524 HV0.05) nitrided layers of 100–150 Am were obtained at 480–500 -C for 240 min, depending on total pressure, gas composition and substrate bias. For the highest nitrogen concentration and lowest bias voltage, no compound layer was formed. The triode plasma nitriding process allowed a significant reduction in processing time for both M2 steel and Ti6Al4V alloy in comparison to conventional D.C. diode plasma nitriding.
机译:通过D.C.通过热离子发射(三极管配置)辅助的D.C,实现了诸如Ti6Al4V和AISI M2钢等不同底物的等离子体氮化。使用D.C的较高的电离水平。三极管配置减少了在Ti6Al4V合金中获得硬度和合理深度氮化壳所需的处理时间和氮化温度。对于该合金,在700-C中实现了560-600 HV0.05和30-40m的氮化层深度的表面硬度值。达到这种氮化温度,硬化似乎主要通过在A-Ti相中掺入氮气,因为通过SEM无法检测到表面上的氮化钛层的形成。对于AISI M2钢,硬化(1379-1524 HV0.05)100-150 AM的氮化层,在480-500 -C-C中获得240分钟,取决于总压力,气体组合物和基材偏压。对于最高的氮浓度和最低偏置电压,没有形成复合层。与常规的D.C.二极管等离子体氮化相比,三极管等离子体氮化过程允许M2钢和Ti6Al4V合金的处理时间显着降低。

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