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Phase separation and formation of the self-organised layered nanostructure in C/Cr coatings in conditions of high ion irradiation

机译:高离子照射条件下C / Cr涂层中自组织分层纳米结构的相分离和形成

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The paper discusses the effect of ion irradiation on a new type of nanoscale multilayer structure in C/Cr PVD coatings formed by a selforganisation mechanism. C/Cr coatings were deposited by the combined steered cathodic arc/unbalanced magnetron sputtering technique, at wide range of bias voltages, Ub from65 to550 V. Plasma diagnostics carried out by electrostatic probe measurements revealed that C/Cr films grow under conditions of intensive ion bombardment with ion-to-neutral ratio exceeding Ji /Jn=6. Under these conditions the high diffusion mobility and the reactivity of the C leads to distinct changes in the coatings microstructure and phase composition. Raman spectroscopy and XPS (X-ray photoelectron spectrometer) analysis of the chemical bonding in the films showed that the phase composition of the films gradually transforms from more graphite like (sp2 C–C bonded) to more Me-carbon (Cr–C bonded), where the content of the carbide phase increases with increase of the bias voltage to Ub=350 V and higher. In parallel HRTEM (high-resolution transmission electron microscopy) employing HAADF (high-angle annular dark field) imaging revealed that the microstructure evolved from columnar with carbon accumulated at the column boundaries (Ub=65 V,95 V) to a structure dominated by onion like C–Cr clusters (Ub=120 V), which than converts to a distinct nanoscale layered structure (Ub=350 V,450 V), finally transforming to a uniform fine grain structure at Ub=550 V. The new nanoscale layered structure forms via ion irradiation induced self-organisation mechanism. It is characterized by an abnormally large values for the bi-layer thickness of 20 nm and 25 nm, which are not related to substrate rotation, for films grown at Ub=350 Vand Ub=450 V, respectively. ADF (annular dark field) STEM (scanning TEM) imaging and quantitative EELS (electron-energy loss spectroscopy) analysis showed that the nanoscale multilayer structure comprises of alternating layers of Me-carbide phase (48%C, 52%Cr) and almost pure C (91.34%C), where the bias voltage defines the bi-layer thickness. A coating growth model is proposed accounting for the irradiation-induced ion mixing, re-sputtering, condensation surface temperature effects, nucleation and kinetic segregation process, as well as the diffusivity of the coating elements to explain the phase separation and formation of the self-organised layered nanostructure observed in C/Cr coatings.
机译:本文讨论离子照射对在由selforganisation机构形成C /铬PVD涂层的一种新型的纳米级多层结构的效果。 C /铬涂料通过沉积在组合转向阴极电弧/非平衡磁控溅射法,在宽范围的偏置电压的,泛素from65 to550 V.等离子体诊断通过静电探针测量数据进行显示,C / Cr膜,密集的离子条件下生长轰击用离子 - 中性点比超过籍/约翰福音= 6。在这些条件下高扩散迁移率以及C导致在涂料明显变化的反应性微观结构和相组成。拉曼光谱和XPS(X射线光电子光谱仪)在膜中的化学结合的分析表明,该薄膜的相组成逐渐从更像(接合SP2 C-C)石墨变换以更ME-碳(CR-C键合的),其中的碳化物相增加与偏置电压,以泛= 350V和更高的增加的含量。并联HRTEM(高分辨率透射电子显微术)采用HAADF(高角环形暗场)成像显示,该微结构从柱状演变与在列边界(UB = 65 V,95体积),通过主导的结构积累碳洋葱像C-铬簇(UB = 120 V),这比转换到一个不同的纳米级层状结构(UB = 350 V,450 V),最后变换为在泛素= 550 V的均匀的细晶粒结构的新的纳米级分层通过离子辐照诱导的自组织机制结构形式。分别它的特点是为20纳米和25纳米双层厚度异常大的值,这是不相关的基板旋转,在泛素= 350 V和泛=为450V生长的膜。 ADF(环形暗场)STEM(扫描透射电子显微镜)成像和定量EELS(电子能量损耗能谱法)分析表明,ME-碳化物相(48%C,52%Cr)为几乎纯的交替层的纳米级多层结构包括C(91.34%C),其中,所述偏置电压限定了双层厚度。涂层的增长模式提出占辐射诱导的离子混合,再溅射,冷凝表面温度的影响,成核和动力学离析过程中,以及该涂层的元素的扩散性来解释自的相分离和形成在C /铬涂层观察组织的层状纳米结构。

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