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X-RAY ANALYTICAL METHODS FOR ULTRATHIN ORGANIC FILMS

机译:超薄有机薄膜的X射线分析方法

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Three x-ray analytical methods were tested for their feasibility to determine the crystal structure of highly ordered Me-phthalocyanine (MePc) molecular films up to 30 nm. The molecular alignment of 3 nm ZnPc on ITO substrates depends on temperature and chemical passivation of the substrate. From near-edge x-ray absorption fine structure spectroscopy the best molecular alignment was found for films on H{sub}3PO{sub}4 passivated ITO surface deposited at 90° substrate temperature. The thickness average of lattice distance of a-modification ZnPc a-axis perpendicular to the substrate surface is determined by XRD measurement to 1.28 nm. For β-modification c-axis a lattice distance of 1.25 is found. The full crystal profile of 37.7 nm CuPc films on oxidized Si were analyzed by x-ray reflectivity calculations fitted to experimental data. Best fit turned out to be a three layer system for Cu-Pc consisting of 3 nm disturbed molecular base on the substrate, 32.5 nm highly ordered bulk layer and 2.2 nm surface layer standing for the film roughness.
机译:测试了三种X射线分析方法的可行性,以确定高达30nm的高度有序的ME-酞菁(MEPC)分子膜的晶体结构。在ITO基板上的3nM ZnPC的分子比取决于基材的温度和化学钝化。从近边X射线吸收细结构光谱法发现了最佳的分子取向对于在90°底物温度下沉积的钝化物质表面钝化物质表面。通过XRD测量到1.28nm的XRD测量确定垂直于基板表面的变形ZnPC A轴的晶格距离的晶格距离的厚度平均值。对于β-修改,C轴发现1.25的晶格距离。通过安装在实验数据的X射线反射率计算分析氧化Si上的37.7nm Cupc膜的全晶形轮廓。最佳装配是Cu-PC的三层系统,包括在基板上的3nm扰动的分子碱基,32.5nm高度有序的散装层和2.2nm表面层抵抗薄膜粗糙度。

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