OPTIMIZATION OF HYDROGENATED AMORPHOUS SILICON (A-SI: H) THIN FILMS DEPOSITED BY RF MAGNETRON SPUTTERING FOR A-SI/C-SI PHOTOVOLTAIC APPLICATIONS

摘要

In this work, hydrogenated amorphous silicon (α-Si: H) deposited by RF magnetron sputtering with argon and hydrogen gas mixture plasma has been characterized. We focused on the effects of deposition parameters, such as discharge power, substrate temperature and hydrogen flow rate on the properties of the fabricated α-Si:H films. Various diagnostics techniques such as Raman spectroscopy, optical transmission measurements, Fourier Transform Infrared (FTIR) spectroscopy were employed to determine optimum deposition conditions for a-Si:H films with sufficient quality for photovoltaic applications.