Thermal Controllability of High Temperature (>1400°C) Rapid Thermal Oxidation for SiC MOSFET

摘要

Effective NO passivation annealing for SiC MOSFET with extreme high temperature (>1400°C) at cold-wall oxidation furnace has been developed by AIST group. For this newly developed process, the thermal distribution and chemical reaction in the reactor are studied by computational numerical analysis. By comparing the experimental process and the simulated results, the spatial distribution of N atom on the wafer is suggested to be the key technology of nitridation process of SiO{sub}2/SiC interface.