Low-temperature elastic softening due to vacancies in boron-doped FZ silicon crystals

摘要

We confirm the following findings obtained in our previous experiment for the low-temperature elastic softening by the vacancies in boron-doped silicon crystals: (1) the steep softening that suddenly starts at 2-4 K m the cooling process, and (2) the complete disappearance of the softening by a weak magnetic field of 4 T applied along [111] direction. We further investigate in detail how the low-temperature softening at a fixed temperature responds to the applied magnetic field, to find the following characteristic anisotropy: The manner of disappearance of the softening strongly depends on the direction of the magnetic field. For the magnetic field imposed along direction, nearly 60% of the full softening still remains even at a strong magnetic field of 8 T, in contrast to the case of magnetic field applied along [111] direction.