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Microstructure and Thermoelectric Properties of P-type Bi_(0.5)Sb_(1.5)Te_3 Compounds Prepared by Spark Plasma Sintering

机译:P型BI_(0.5)SB_(1.5)TE_3通过火花等离子体烧结制备的化合物的微观结构和热电性能

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The microstructure and thermoelectrical properties of the 4wt% Te doped p-type Bi_(0.5)Sb_(1.5)Te_3 compounds, fabricated by using spark plasma sintering in the temperature ranging from 250°C to 350°C, were characterized. The density of the sintered compounds was increased to 99.2% of theoretical density by carrying out the consolidation at 350°C for 2 min. The Seebeck coefficient, thermal conductivity and electrical resistivity were dependent on hydrogen reduction process and sintering temperature. The Seebeck coefficient increased with reduction process while the electrical resisitivity significantly decreased. Also, the electrical resistivity decreased and thermal conductivity increased with sintering temperature. The results suggest that the carrier density and mobility vary with reduction process and sintering temperature. The highest figure of merit of 3.5x10~(-3)/K was obtained for the compounds spark plasma sintered at 350°C for 2 min by using the hydrogen-reduced powders.
机译:4wt%TE掺杂P型Bi_(0.5)Sb_(1.5)TE_3化合物的微观结构和热电性能,通过在250℃至350℃的温度范围内使用火花等离子体烧结制造。通过在350℃下在350℃下进行2分钟,将烧结化合物的密度增加到理论密度的99.2%。塞贝克系数,导热率和电阻率取决于还原过程和烧结温度。塞贝克系数随着还原过程而增加,而电阻显着降低。而且,电阻率降低,导热率随烧结温度而增加。结果表明,载流子密度和迁移率随还原过程和烧结温度而变化。通过使用氢还原粉末在350℃下烧结,得到3.5x10〜(-3)/ k的最高优点。

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