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Orientation Distribution in Bi_2Te_3-based Compound Prepared by Spark Plasma Sintering

机译:由火花等离子体烧结制备的基于Bi_2te_3的化合物中的取向分布

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P-type Bi_(0.5)Sb_(1.5)Te_3 compounds doped with 3wt.% Te were fabricated by spark plasma sintering after mixing large powders (P_L) and small powders(P_s). We obtained the highest figure of merit(Z_c) of 2.89X10~(-3)/K in sintered compound mixed to P_L:P_s=80:20. This resulted from the increase of orientation by large powders (P_s) and the reduction of pores by small powders. The figure of merit(Z_c) of the sintered compound using only small powders (P_s) showed a lower value of 2.67 X 10~(-3)/K compared with that of sintered compound mixed to P_L:P_s=80:20 owing to the increase of electrical resistivity.
机译:p型Bi_(0.5)Sb_(1.5)TE_3掺杂3wt的化合物。在混合大粉末(P_L)和小粉末(P_s)后,通过火花等离子体烧结制造%TE。 在混合至P_L的烧结化合物中获得了2.89x10〜(-3)/ k的最高值(Z_C)的最高值:P_S = 80:20。 这是由大粉末(P_S)的取向的增加和通过小粉末减少孔。 仅使用小粉末(P_S)的烧结化合物的优选(Z_C)的图谱显示为2.67×10〜(-3)/ k的较低值,与混合到P_L的烧结化合物:P_S = 80:20 电阻率的增加。

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