首页> 外文会议>International Symposium on Eco-Materials Processing amp; Design; 20050116-18; Jinju(KR) >Orientation Distribution in Bi_2Te_3-based Compound Prepared by Spark Plasma Sintering
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Orientation Distribution in Bi_2Te_3-based Compound Prepared by Spark Plasma Sintering

机译:放电等离子体烧结制备Bi_2Te_3基化合物的取向分布

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摘要

P-type Bi_(0.5)Sb_(1.5)Te_3 compounds doped with 3wt.% Te were fabricated by spark plasma sintering after mixing large powders (P_L) and small powders(P_s). We obtained the highest figure of merit(Z_c) of 2.89X10~(-3)/K in sintered compound mixed to P_L:P_s=80:20. This resulted from the increase of orientation by large powders (P_s) and the reduction of pores by small powders. The figure of merit(Z_c) of the sintered compound using only small powders (P_s) showed a lower value of 2.67 X 10~(-3)/K compared with that of sintered compound mixed to P_L:P_s=80:20 owing to the increase of electrical resistivity.
机译:混合大粉末(P_L)和小粉末(P_s)后,通过火花等离子体烧结制备了掺有3wt。%Te的P型Bi_(0.5)Sb_(1.5)Te_3化合物。在混合到P_L:P_s = 80:20的烧结化合物中,我们获得的最高品质因数(Z_c)为2.89X10〜(-3)/ K。这是由于大粉末(P_s)的取向增加和小粉末的孔减少所致。仅使用小粉末(P_s)的烧结化合物的品质因数(Z_c)显示出比混合到P_L:P_s = 80:20的烧结化合物的更低的2.67 X 10〜(-3)/ K的值。电阻率的增加。

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