La{sub}2O{sub}3 Gate Dielectric Thin Film with Sc{sub}2O{sub}3 Buffer Layer for High Temperature Annealing

摘要

Leakage current characteristics of high temperature annealed La{sub}2O{sub}3 film with Sc{sub}2O{sub}3 buffer layer was reported. Large amount of leakage current suppression was obtained by inserting Sc{sub}2O{sub}3 when annealed at high temperature, without degrading the Equivalent Oxide Thickness (EOT). La{sub}2O{sub}3/Sc{sub}2O{sub}3 gate stack would be one of the solution for La{sub}2O{sub}3-based gate insulator for high temperature annealing.