EFFICIENT CALCULATION OF LIFETIME BASED DIRECT TUNNELING THROUGH STACKED DIELECTRICS

摘要

We present an efficient simulation method for lifetime based tunneling in CMOS devices through layers of high-ic dielectrics, which relies on the precise determination of quasi-bound states (QBS). The QBS are calculated with the perfectly matched layer (PML) method. Introducing a complex coordinate stretching allows artifical absorbing layers to be applied at the boundaries. The QBS appear as the eigenvalues of a linear, non-Hermitian Hamiltonian where the QBS lifetimes are directly related to the imaginary part of the eigenvalues. The PML method turns out to be a numerically stable and efficient method to calculate QBS lifetimes for the investigation of direct tunneling through stacked gate dielectrics.