Tunneling magnetoresistance of magnetic tunneling Junction cell measured by conducting atomic force microscopy with ramping dc bias voltage rate

摘要

Magnetoresistance (MR) ratio in a magnetic tunneling junction cell with a structure of SiO_2 (20 nm)/Ta (5 nm)/Cu (20 nm)/Ta (5 nm)/NiFe (2 nm)/Cu (5 nm)/MnIr (10 nm)/CoFe (4 nm)/Al-O (1.5 nm)/CoFe (4 nm)/NiFe (20 nm)/Ta (50 nm) was measured by conducting atomic force microscopy to obtain I-V curves. Tunnel magnetoresistance was characterized from these nonlinear I-V curves. MR values of 33.9 percent, 30.5 percent, 30.3 percent, and 28 percent were obtained when applying magnetic fields of ±150 Oe at various dc bias voltage ramping rates. Several ramping rate values were 0.498, 4.65, 9.3, and 27.9 Hz, respectively.