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Indirect exchange in dilute magnetic semiconductors

机译:稀磁半导体的间接交换

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A generalized Ruderman-Kittel-Kasuya-Yosida (RKKY) approach is used to calculate indirect exchange interactions between localized spins in doped magnetic semiconductors. The exchange is mediated by electron or hole states centered around shallow impurities. The states hybridize and may or may not form a narrow band, but in both cases, the exchange is obtained from the hybridized states by second-order perturbation theory. As in the free-electron RKKY model, both positive and negative exchange interactions occur, but the strength J_(ij) of the exchange is no longer a unique function of the distance between the localized spins. A closed expression with simple geometric interpretation is obtained in the dilute limit of exchange mediated by two overlapping orbitals.
机译:广义Ruderman-Kittel-Kasuya-Yosida(Rkky)方法用于计算掺杂磁半导体之间局部旋转之间的间接交换相互作用。交换由电子或孔状态介导,以浅杂质为中心。杂交和可能或可能不形成窄带,但在这两种情况下,通过二阶扰动理论从杂交状态获得交换。与在自由电子Rkky模型中一样,发生正交和负交换相互作用,但交换的强度J_(IJ)不再是局部旋转之间距离的独特功能。在由两个重叠轨道介导的交换的稀释极限中获得具有简单几何解释的闭合表达。

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