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Indirect exchange in dilute magnetic semiconductors

机译:稀磁半导体中的间接交换

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摘要

A generalized Ruderman-Kittel-Kasuya-Yosida (RKKY) approach is used to calculate indirect exchange interactions between localized spins in doped magnetic semiconductors. The exchange is mediated by electron or hole states centered around shallow impurities. The states hybridize and may or may not form a narrow band, but in both cases, the exchange is obtained from the hybridized states by second-order perturbation theory. As in the free-electron RKKY model, both positive and negative exchange interactions occur, but the strength J_(ij) of the exchange is no longer a unique function of the distance between the localized spins. A closed expression with simple geometric interpretation is obtained in the dilute limit of exchange mediated by two overlapping orbitals.
机译:通用的Ruderman-Kittel-Kasuya-Yosida(RKKY)方法用于计算掺杂磁性半导体中局部自旋之间的间接交换相互作用。交换是由围绕浅杂质的电子或空穴状态介导的。状态发生杂化,可能形成窄带,也可能不形成窄带,但是在两种情况下,交换都是通过二阶扰动理论从杂化状态获得的。如在自由电子RKKY模型中一样,会发生正向和负向的交换相互作用,但是交换的强度J_(ij)不再是局部自旋之间距离的唯一函数。在两个重叠的轨道介导的稀稀交换极限中,获得了具有简单几何解释的封闭式。

著录项

  • 来源
    《Journal of Applied Physics》 |2006年第8pt2期|p.08D504.1-08D504.3|共3页
  • 作者单位

    Department of Physics and Astronomy and Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;计量学;
  • 关键词

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