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(07E340) Magnetostriction measurement of a giant magnetoresistance film on a practical substrate covered by a shield layer

机译:(07E340)在屏蔽层覆盖的实际基材上的巨磁阻膜的磁致伸缩测量

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Magnetostriction constant of a magnetic thin film is conventionally measured by detecting the deformation of a coupon sample that consists of the magnetic film deposited on a thin glass substrate (e.g., cover glass of size 10 mm × 25 mm) under an applied field using a laser beam [A. C. Tarn and H. Schroeder, J. Appl. Phys. 64, 5422 (1988)]. This method, however, cannot be applied to films deposited on actual large-size substrates (wafers) with diameter from 3 to 6 in. or more. In a previous paper [Okita et al., J. Phys.: Conf. Ser. 200, 112008 (2010)], the authors presented a method for measuring magnetostriction of a magnetic thin film deposited on an actual substrate by detecting the change of magnetic anisotropy field, H_k, under mechanical bending of the substrate. It was validated that the method is very effective for measuring the magnetostriction constant of a free layer on the actual substrate. However, since a Ni-Fe shield layer usually covers a magnetic head used for a hard disk drive, this shield layer disturbs the effective measurement of R-H curve under minor loop. Therefore, a high magnetic field that can saturate the magnetic material in the shield layer should be applied to the head in order to measure the magnetostriction constant of a pinned layer under the shield layer. In this paper, this method was applied to the measurement of the magnetostriction constant of a pinned layer under the shield layer by using a high magnetic field up to 320 kA/m (4 kOe).
机译:磁性薄膜的磁致索常规通过检测由沉积在薄玻璃基板(例如,覆盖尺寸为10mm×25mm)的磁性薄膜的优惠券样本的变形来测量,使用激光器梁[A. C. Tarn和H. Schroeder,J. Appl。物理。 64,5422(1988)]。然而,这种方法不能应用于沉积在实际大尺寸基板(晶片)上的薄膜,其直径为3至6。或更多。在先前的论文中[okita等人,J. phys .: conf。 Ser。作者呈现了一种用于通过检测基板的机械弯曲的磁各向异性场,H_K的变化来测量沉积在实际基板上的磁性薄膜的磁致伸缩的方法。验证了该方法非常有效地测量实际基板上的自由层的磁致伸缩常数。然而,由于Ni-Fe屏蔽层通常覆盖用于硬盘驱动器的磁头,所以该屏蔽层扰乱了在次要循环下的R-H曲线的有效测量。因此,可以将屏蔽层中的磁性材料饱和的高磁场应施加到头部,以便在屏蔽层下测量钉扎层的磁致伸缩常数。在本文中,通过使用高达320ka / m(4只koe)的高磁场,将该方法应用于屏蔽层下围栏层下的磁致伸缩常数。

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