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(07A742) Effect of high temperature annealing on ion-irradiation induced magnetization in FeRh thin films

机译:(07A742)高温退火对FERH薄膜离子照射诱导磁化的影响

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Low temperature ferromagnetic FeRh with B2-type crystal structure was successfully synthesized by annealing of the excessively irradiated FeRh thin film samples having nonmagnetic A1-type crystal structure. The B2 phase transformed from the A1 phase by this process contained some amount of lattice defects, such as anti-site defects and vacancies, which made the magnetic spins of the sample aligned. These results imply that the combination of the process of the ion-beam irradiation and annealing of the film samples makes the magnetic state systematically controlled.
机译:通过对具有非磁性A1型晶体结构的过度照射的FERH薄膜样品的退火成功地合成了具有B2型晶体结构的低温铁磁性FERH。通过该过程从A1相转化的B2相包含一定量的晶格缺陷,例如防置缺陷和空位,其使样品的磁性旋转进行了排列。这些结果意味着离子束照射过程的组合膜样品的退火使得系统控制的磁性状态。

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