(07D714) Thickness dependence of critical current density in GdBa_2Cu_3O_(7-δ) thin films with BaSnO_3 addition

摘要

We investigated influence of 4 wt. % BaSnO_3 (BSO) addition on the thickness dependence of critical current density (J_c) of GdBa_2Cu_3O_(7-δ) (GdBCO) thin films deposited by using the pulsed laser deposition technique. The results show that J_c measured at 77 K of the GdBCO films is significantly enhanced by the addition of BSO. Thickness dependence of self-field J_c in the BSO doped GdBCO films is reduced in comparison with that of pure GdBCO films. Improved field performance of J_c is also observed for the BSO-doped GdBCO films up to thickness of 1.5 μm. The enhancements are attributed to the growth of artificial pinning centers in the form of BSO nano precipitates confirmed by the cross-sectional transmission electron microscopy images.