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The pinning role of nonferromagnetic B phase in the domain wall motion of ferromagnetic MnAs film on GaAs(001)

机译:非异磁B相在GaAs(001)上铁磁MNA膜域壁运动中的钉扎作用

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We report the pinning role of the nonferromagnetic beta phase in the domain wall motion of ferromagnetic MnAs film on GaAs(OOl) in the temperature range of 20-35 deg C. The dependence of the coercivity on the applied field direction at all temperatures was found to follow an inverse cosine law, as expected from a theoretical model considering the domain wall motion in ferromagnetic films. From this analysis, it was found that the domain wall pinning energy density increases as the temperature increases. This is ascribed to the increase in the volume fraction of the nonferromagnetic beta phase, resulting in an increase of the domain wall pinning effect during the domain wall motion.
机译:我们在20-35℃的温度范围内报道了在GaAs(OOL)上的铁磁性MNA膜的域壁运动中的非转化β相的钉扎作用。发现矫顽力对所有温度的施加场方向的依赖性根据考虑到铁磁膜中的畴壁运动的理论模型,遵循逆余弦定律。根据该分析,发现畴壁钉扎能量密度随着温度的增加而增加。这归因于非异晶β相的体积分数的增加,导致在畴壁运动期间增加畴壁钉效应。

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