首页> 外文会议>International Conference on Advanced Ceramics and Composites >DYNAMIC ELECTROMECHANICAL RESPONSE OF 4H AND 6H SINGLE CRYSTAL SILICON CARBIDE
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DYNAMIC ELECTROMECHANICAL RESPONSE OF 4H AND 6H SINGLE CRYSTAL SILICON CARBIDE

机译:4H和6H单晶碳化硅的动态机电响应

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Ceramic materials are used extensively in armor applications for both solider and vehicle protection. Certain ceramics, such as silicon carbide, exhibit piezoelectricity, however the coupling between mechanical and electrical fields is not currently utilized. This paper highlights a unique experimental methodology that measures the in-situ electromechanical response of single crystal 4H and 6H silicon carbide (SiC) under dynamic compression using a Kolsky (split-Hopkinson) bar at strain rates of 10~3 s~(-1). Both damage evolution and electric charge during rapid loading and fragmentation of these two polytypes is presented and discussed in the context of the wurtzite crystal structure.
机译:陶瓷材料是广泛的用于士兵和车辆保护的装甲应用。某些陶瓷(例如碳化硅)表现出压电性,但是当前没有机械和电场之间的耦合。本文突出了一种独特的实验方法,可测量在动态压缩下使用Kolsky(Split-Hopkinson)栏以10〜3 S〜(-1的速度率)测量动态压缩下单晶4h和6h碳化硅(SiC)的原位机电响应。(-1 )。在紫立岩晶体结构的背景下呈现并讨论在快速加载和碎裂期间损伤进化和电荷的两种损伤进化和电荷。

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