DETECTION OF AMORPHOUS SILICA IN OXIDIZED MAXTHAL Ti3SiC2 AT 500 - 1000°C

摘要

This paper describes the use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to identify the amorphous silica in Ti3SiC2 oxidised at 500-1000cC. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Tt3SiC2 at 1000°C.