This paper outlines a structural-property-processing approach to develop state of the art dielectrics for prototyping and testing in simple devices. The first part of the work will consider the important role of interfaces in X7R base metal capacitors and electrolytic capacitors. Here modern transmission electron microscopy techniques coupled with impedance spectroscopy analysis and thermal stimulated current gives insights into the degradation mechanism of BME capacitors and uniformity of oxygen stoichiometry in Ta and Nb-based electrolytic capacitors. With future trends in decoupling capacitors proving to be continuously more difficult to process and manufacture with powder and sintering routes in MLCC's we are exploring new thin film technologies to process multilayer capacitors. A sol-gel transfer printing technique has been employed to produce multilayers of BaTiO_3 with 0.1 micron layers. From a new materials perspective, perovskite structured dielectric materials are being developed with relaxor dielectric characteristics ε_r ～ 12,000 and tan δ ～0.05 that permit high temperature (300°C) utilization. These are processed into multilayer form and demonstrate excellent voltage saturation and lifetime performance. We also consider going beyond the traditional low fire dielectrics (～ with sintering @ 850-900°C), we have a BaO-4TeO_2 high frequency dielectric that can be cofired with A1 metals at 550°C, and with properties of interest to microwave capacitive devices.
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