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Reduction and oxidation annealing effects on Cu K-edge XAFS for electron-doped cuprate superconductors

机译:用于电子掺杂铜铜超导体Cu K-Edge XAFS的还原和氧化退火效应

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Reduction and oxidation annealing effects on the electronic states around the copper sites for Pr_(2-x)Ce_xCuO_4 and Nd_(2-x)Ce_xCuO_4 with x = 0 and x = 0.15 were investigated by Cu K-edge x-ray absorption measurements. Cu K near-edge spectra were changed by the reduction annealing in a manner similar to the case of Ce substitution for both x = 0 and x = 0.15. This means an increase of electron density at the copper sites, indicating the aspect of electron doping in the reduction annealing. This reduction annealing effect on the near-edge spectra are reverted by the additional oxidation annealing. The amount of electron density around the copper sites is varied by the reduction and oxidation annealing, reversibly, corresponding to the reversible variation of the physical property from insulating to superconductivity.
机译:通过Cu K-Edge X射线吸收测量研究了用X = 0和X = 0.15的PR_(2-X)CE_XCUO_4和ND_(2-X)CE_XCUO_4周围的电子状态对电子状态的氧化退火效应。 Cu K近边缘光谱通过X = 0和x = 0.15的类似CE替换的方式改变了近缘光谱。这意味着铜位点的电子密度增加,表示电子掺杂在减少退火中的方面。通过附加的氧化退火再次对近边光谱的这种降低退火效应。铜部位周围的电子密度的量由还原和氧化退火,可逆地,对应于物理性质与超导性的可逆变化相对应。

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