InSb 288*32 FPA with digital TDI for low background application

摘要

32*288 format FPA based on InSb two dimension arrays (IDA) of photodiodes with function of digital TDI were investigated at low background flow. Dark currents of TDA photodiodes in wide temperature region, spectral noise distribution and threshold power with TDI simulation are investigated. It was established that at T=77K dark current is (I - 3)*10-11A at optimal negative bias and decreases in the order of magnitude at T=65K. Threshold power at T=77K at integration time Ti=6 ms is not more 2*10-14 W/pixel and is limited commonly by dark current noise. Modeling of digital TDI showed that not more than twenty TDI stages are effective because of the presence of 1/f noise and threshold power would be at about 3*10-15 W/pixel.