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PHASE COMPOSITION AND STRUCTURE OF NANOSCALED THERMOELECTRIC FILMS ON BASE OF CoSb3 SKUTTERUDITE

机译:COSB3 SKUTTUTUDITE底座上纳米级热电薄膜的相组合物和结构

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The processes of skutterudite CoSb_3 formation in nanoscaled CoSb_x(30 nm) (1.8<х<4.2) films deposited on SiO_2(100 nm)/Si(001) substrate were investigated by methods of physical materials science. After deposition the films are in x-ray amorphous state. Amorphous films crystallization occurs during annealing in temperature range of 140°C-200°C. Phase composition of nanoscaled films corresponds to Co-Sb phase diagram. At annealing higher 400°C Sb sublimation occurs and amount of СоSb_2 phase increases. More intensive process of Sb sublimation is observed at annealing of x-ray amorphous films.
机译:通过物理学科学的方法研究了沉积在SiO_2(100nM)/ Si(001)衬底上的纳米级COSB_x(3.8х<4.2)膜中的Skutterudite COSB_3形成的方法。沉积后,膜处于X射线非晶态。在140℃-200℃的温度范围内的退火期间发生非晶膜结晶。纳米型膜的相组成对应于CO-SB相图。在退火时,较高的400℃,发生升华和соsb_2相的量增加。在X射线非晶膜退火时观察到Sb升华的更多密集过程。

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