A Comparative Study of Poly-Si Films Fabricated on Glass by Crystallisation of PECVD a-Si:H via the SPC and SPE Methods

摘要

The structural material quality and the diode properties of poly-Si thin-film solar cells grown by the solid phase crystallisation (SPC) and solid phase epitaxy (SPE) methods are compared. SPE poly-Si material, which is grown on a poly-Si seed layer made by the aluminium-induced crystallisation (AIC) process, has a significantly better crystal quality compared to SPC poly-Si material grown on bare glass. However, this advantage has as yet not been translated into enhanced photovoltaic performance. Analysis of Suns-V_(oc) data indicates that the problem lies in the absorber region of the SPE diodes.