In this study, EDS was used to explore the application of x-ray microanalysis in metallic film depth profiling. Au films with a varied thickness from 50 nm to 400 nm were deposited on silicon (Si) substrate by magnetron sputtering method. To determine the electron beam energy required to penetrate the films, incremental electron beam energy (from 4keV to 30keV) was applied while other parameters were kept constant. With higher energy applied, the electron beam can penetrate deeper and more Si signal can be detected. The Au film thickness almost has linear relationship with the required penetration electron beam energy. The effects of probe current on the penetration depth were investigated too. It was found that Si could be detected at low probe current for thin Au film at a fixed electron beam energy. Furthermore, after the occurrence of Si signal, the Si signal intensity maintained at an almost constant value even a higher probe current was applied. The electron beam energy is the most dominant factor for metallic film penetration.
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