SUPRESSION OF SURFACE MICRO-ROUGHNESS ON Si(UO)

摘要

The current drivability of p-MOSFET on Si(110) surface is 2-3 times larger than that on Si(100) surface. The electrical properties of those devices are influenced by micro-roughness of silicon surface. We focused on the wet cleaning process and studied the influence of ultra pure water and the methods of cleaning process. Atomic force microscopy (AFM) was used for the evaluation of micro-roughness. The amount of dissolved silicon atoms into ultra pure water is estimated by inductively coupled plasma-atomic emission spectrometry (ICP-AES). Micro-roughness of silicon surface can be improved by control of ambient gas and dissolved gas of ultra pure water rinse. Hydrogen termination on silicon surface was also studied.