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A full time-domain approach to spatio-temporal dynamics of active semiconductor devices

机译:有源半导体器件的时空动态的全时域方法

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We present a finite-difference full time-domain model including the macroscopic Maxwell curl equations and the band-resolved semiconductor Bloch equations. A key element of our novel formulation is that neither the slowly varying amplitude nor the rotating wave approximation are necessary. This makes the model accurate to a broad frequency range. The propagation, amplification and reshaping of femtosecond pulses in active semiconductor amplifiers as well as optically pumped monolithic disk lasers with sub-wavelength refractive index structures and nonlinear gain or absorber elements are simulated.
机译:我们提出了一个有限差异的全时域模型,包括宏观麦克风卷曲方程和带分辨半导体Bloch方程。我们的新制剂的关键要素是,既不是缓慢变化的幅度也不是旋转波近似。这使得模型精确到宽频范围。模拟了活性半导体放大器中飞秒脉冲的传播,放大和重塑,以及具有子波长折射率结构和非线性增益或吸收元件的光学泵浦整体盘激光器。

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