Wigner Simulation of the Transition of a 'Single' to 'Double' Barrier DMS Device

摘要

THE PRESENCE OF DILUTE MAGNETIC SEMICONDUCTORS (DMS) ENRICHES THE DESIGN POTENTIAL OF NANO SCALE BARRIER DEVICES. PLACEMENT OF THESE DMS LAYERS WITHIN OR ADJACENT TO A BARRIER CAN EFFECTIVELY ' LOWER OR RAISE THE BARRIER HEIGHT FOR CARRIERS OF DIFFERENT SPIN AND THEREBY INTRODUCE SEPARATE BUT COUPLED COMPONENTS OF CURRENT. THE MAGNETIC FIELD IN HIGH G-FACTOR DEVICES THEN CAN FUNCTION AS A PSEUDO THIRD TERMINAL. IN ANTICIPATION OF AN N-TYPE TECHNOLOGY WITH THESE MATERIALS WE EXAMINE THE DEVELOPMENT OF A BARRIER DEVICE THAT CONTAINS A DMS LAYER STRATEGICALLY PLACED SO THAT IN THE PRESENCE OF A MAGNETIC FIELD THE BARRIER DEVICE IS TRANSFORMED INTO A DOUBLE BARRIER DEVICE. THE GOAL OF THIS DESIGN IS TO CREATE A DEVICE THAT WILL SHOW TUNNELING RESONANCES. SOME EARLY CALCULATIONS WITH THIS STRUCTURE WILL BE PRESENTED SHOWING THE POSSIBILITIES, PITFALLS AND POTENTIAL FOR DESIGNING SUCH A STRUCTURE