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Study of Electronic Structure In Ni_3Fe/Al_2O_3/Ni_3Fe Magnetic Tunnel Junction with Various Ferromagnetic Layer Thicknesses

机译:用各种铁磁层厚度研究Ni_3Fe / Al_2O_3 / Ni_3Fe磁隧道结的电子结构

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A series models of Ni_3Fe/Al_2O_3/Ni_3Fe magnetic tunnel junction with Al-terminated interfaces have been established for investigating the influence of ferromagnetic layer thickness on the electronic structure, employing first-principle methods based on local spin-density approximation theory. The spin polarization of the interfacial Ni3Fe monolayer shows a maximum value as the thickness of ferromagnetic layer increases. The Al monolayers at the ferromagnetic/insulating interface and the O monolayer in the interior of insulating layer are also studied in terms of the change of spin polarization with the ferromagnetic layer thickness. In addition, we have found that the structure of Ni_3Fe monolayer has a great influence on the spin polarization.
机译:已经建立了一种系列型号的Ni_3Fe / Al_2O_3 / Ni_3Fe磁隧道结合,用于研究基于局部旋转密度近似理论的第一原理方法的铁磁层厚度对电子结构的影响。随着铁磁层的厚度增加,界面Ni3Fe单层的自旋极化显示最大值。在具有铁磁层厚度的自旋极化的变化方面还研究了铁磁/绝缘界面的Al单层和绝缘层内部的单层。此外,我们发现Ni_3Fe单层的结构对自旋极化产生了很大影响。

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