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Electron Structure and Interface Energy of GP Zone in Al-Zn Alloy

机译:Al-Zn合金中GP区的电子结构和界面能量

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The valence electron structure of GP Zone in Al-Zn alloy was calculated according to the Empirical Electron Theory(EET). The result of valence electron structure was further applied to analyze the interface energy between GP Zone and matrix. The reason that the GP Zones were formed even at the highest quenching speed and the hardness was stably ascended as soon as GP zones were formed and reached the maximum before the precipitation of metastable phase, was that the amoumt of the strongest covalent bond in the GP Zone was far more than that in a -Al cell and the Al atom in GP Zone was easily prone to forming covalent bond with Zn atom. It was an easy and effective method to apply the EET theory with the hardball model to calculation of interface energy.
机译:根据经验电子理论(EET)计算Al-Zn合金中GP区的价电子结构。 进一步应用了价电子结构的结果以分析GP区和基质之间的界面能量。 即使在最高淬火速度下形成GP区的原因是在形成GP区的最高淬火速度和硬度稳定上升,并且在亚稳阶段沉淀之前达到最大值,是GP中最强的共价键的amoumt 区域远远超过-al细胞中的,并且GP区中的Al原子容易易于与Zn原子形成共价键。 将EET理论与硬球模型应用于界面能量计算是一种简单有效的方法。

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