Measurements of Charge Collection Efficiency of p~+/n Junction SiC Detectors

摘要

Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1]. In this work p+/n SiC diodes realized on a medium doped (1X10~(15) cm~(-3)), 40 mum thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr~(90) source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e~- and a collection length (ratio between collected charges and generated e-h pairs/mum) equal to the estimated width of the depleted region.