Degradation of Charge Collection Efficiency Obtained for 6H-SiC n~+p Diodes Irradiated with Gold Ions

摘要

The charge generated in 6H-SiC n~+p diodes by gold (Au) ion irradiation at an energy of 12 MeV was evaluated using the Transient Ion Beam Induced Current (TIBIC). The signal peak of the transient current increases, and the fall-time decreases with increasing applied reverse bias. The value of collected charge experimentally obtained is smaller than the ideal value. The Charge Collection Efficiency (CCE) of 6H-SiC n~+p diodes irradiated with Au ions is approximately 50 % in spite that the CCE of 100 % is obtained in the case of oxygen (O) ion irradiation.