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Comparison of R-curve Behavior of Si_3N_4 measured by indentation Method and Single - Edge V-Notched Beam Technique (SEVNB)

机译:压痕法测定的Si_3N_4的R曲线行为和单边缘V型射线技术(SEVNB)的比较

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Study compare R-curve behaviour of silicon nitride obtained using Vickers indented beam specimens and single edge V-notched beam (SEVNB). R-curve measurement realized by Vickers indented beam was reported by Krause. Crack growth using single edge V-notched beam was observed in situ. The indentation experiments, in comparison with SEVNB method revealed higher R-curve values (K_R=3.3 - 4.8 MPa.m~(1/2)). The discrepancy in the R-curve results is attributed to inaccuracy related to the determination of indentation toughness. The indentation fracture toughness may include the aspects of crack opening behaviour, residual indentation stress intensity.
机译:研究比较使用维克斯凹槽标本和单边缘V型梁(SEVN)获得的氮化硅的R曲线行为。通过KRAUE报道了维克斯缩进光束实现的R曲线测量。使用单边缘V-NOTCHED光束的裂缝生长原位观察到。与SeVB方法相比,缩进实验揭示了较高的R曲线值(K_R = 3.3-4.8MPa.m〜(1/2))。 R曲线结果中的差异归因于与测定压痕韧性相关的不准确性。压痕断裂韧性可包括裂缝开度行为的方面,残留凹陷应力强度。

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