SIMULATING NANODEVICES WITH THE TRANSFER MATRIX METHOD

摘要

In this paper an analysis of two nanodeviees, the nanowire with periodic potential barriers and the multiple-gate stub transistor, is carry out by using the transfer matrix method. The single stub transistor presents the shortcoming of requiring highly precise gate voltage, to close the channel. The multiple-gate stub configuration can be used to reduce this problem. Now, we demonstrate, using the transfer matrix method, that no significative increase of the blocked transmission bands is obtained for more than five stubs in the multiple-gate quantum stub transistor. A comparative study between the transfer matrix method and Green function iterative method is also presented.