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Comparison of solutions to the scatterometry inverse problem

机译:散射仪逆问题的解决方案比较

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Scatterometry is a novel optical metrology that has received considerable attention in the silicon industry in the past few years. Based on the analysis of light scattered from a periodic sample, scatterometry technology can be thought of as consisting of two parts known as the forward problem and the inverse problem. In the forward problem, a scatterometer "signature" is measured. The signature is simply the measured optical response of the scattering features to some incident illumination, like laser light. In the inverse problem, the signature is analyzed in order to determine the parameters (such as linewidth, thickness, profile, etc) of the scattering features. Typically a rigorous electrodynamic model is used in the solution to the inverse problem, but due to the complexity of the model there is no direct analytic solution. Instead, a variety of numerical methods to solve the inverse problem have been proposed and utilized. The earliest widely used method of solution to the inverse problem involved the generation of a "library" of scatter signatures corresponding to discrete parameter combinations of the structure being measured. Once the library was generated, it was then searched in order to determine the best match to the measured signature. The parameters of the best match were then reported as the parameters of the measured signature. As the technology matured, other methods such as model optimization techniques also emerged. In fact, a variety of alternate techniques have been explored and reported, but a general study comparing the results (and hence the strengths and weaknesses) of the various techniques has yet to be performed. In this research, we shall report results from using several different solutions to the inverse problem on two applications (patterned resist and etched poly). The solution methods shall include the classic library search method as well as three common optimization methods. The results will show that each technique has strengths and weaknesses. For example, the library search methods are generally the most robust but also the most time consuming, and the optimization methods, while fast, are prone to reporting a local but not global minima.
机译:散射量是一种新的光学计量,在过去几年中在硅工业中受到了相当大的关注。基于从周期性样品散射的光分析,可以认为散射测定技术与称为前向问题的两部分和逆问题组成。在前向问题中,测量散射计“签名”。签名只是将散射特征的测量光学响应仅为一些入射照明,如激光。在逆问题中,分析签名以确定散射特征的参数(例如线宽,厚度,轮廓等)。通常,在解决方案中使用严格的电动模型,但由于模型的复杂性没有直接分析溶液。相反,已经提出并利用了解决逆问题的各种数值方法。最早使用的逆问题的解决方法涉及产生对应于正在测量的结构的离散参数组合的散射签名的“库”。生成库后,然后搜索它以确定与测量签名的最佳匹配。然后将最佳匹配的参数报告为测量签名的参数。随着技术成熟的,其他方法如模型优化技术也出现。事实上,已经探索和报道了各种替代技术,而是一般性研究比较了各种技术的结果(以及因此和弱点)。在这项研究中,我们将报告使用几种不同解决方案的结果对两种应用的反问题(图案抗蚀剂和蚀刻多)。解决方案方法应包括经典库搜索方法以及三种常见的优化方法。结果表明,每种技术都具有优势和劣势。例如,库搜索方法通常是最强大的,但也是最耗时的,而且优化方法快速,易于报告本地但不是全球性的最小值。

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