OPC Accuracy and Process Window Verification Methodology for Sub-100nm Node

摘要

As optical lithography has been pushed down to its theoretical resolution limit, the application of very high NA and aggressive Resolution Enhancement Techniques (RETs) are required in order to ensure necessary resolution and sufficient process window for DRAM cell layouts. The introduction of these technologies, however, leaves very small process window for core and peripheral layouts. In addition, new generation DRAM devices demand very precise CD control of the core and peripheral layouts. It implies that the time has come to keep a very watchful eye on the core and peripheral layouts as well as DRAM cells. Recently, Process Window Qualification (PWQ) technology has been introduced and is known to be very useful to estimate process window of core and peripheral layouts. Also, novel measurement system which can compare SEM image with CAD data is being developed and it can be of great help to evaluate OPC accuracy and feed back the CD deviation to OPC modeling. Last but not least, New Mask Qualification (NMQ) is proposed to verify very low K1 lithography by comparing with relatively high K1 lithography. In this paper, most effective OPC verification methodologies for sub-100nm node are discussed.