Mercury Cadmium Telluride is an important Infrared Semiconductor material used for fabrication of Infrared Detectors. Epitaxial layers grown by Liquid Phase Epitaxy (LPE) are widely used for this purpose. Fabrication of detectors require stringent electrical properties and normally p-type layers having p~l x 10~(16)/cm~3 are required for this purpose. In this paper we discuss the effect of radiations like gamma ray, high energy oxygen (100 MeV) and plasma hydrogen and laser radiation on the electrical properties of MCT epitaxial layers grown from liquid phase epitaxy. Thermal radiations can be effectively used to tune the electrical properties of these epilayers. It is found that gamma ray irradiation does increase the number of carriers and it does not have any effect on the anomalous electrical properties whereas the high energy oxygen and plasma hydrogen have significant effect on the anomalous electrical properties of the epitaxial layers. Plasma hydrogenation and laser radiations are also found to have significant effect on the electrical properties of these epilayers. Laser annealing is found to increase the p-type behaviour of MCT epilayers.
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