NI GERMANIDE SCHOTTKY CONTACT WITH GE

摘要

We have successfully fabricated Ni Germanide Schottky contact on n-Ge (100) by sputtering metal Ni on Ge followed by a furnace annealing in N2 from 300°C to 500°C. The results of the X-ray Diffraction (XRD) indicate that the NiGe germanides with (111), (121) and (002) crystallization phases were formed under various annealed temperature. A NiGe(lll)/n-Ge (100) Schottky contact with 0.4eV barrier height formed under a 300°C annealing process shows the highest Ion/IOff ratio.