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Possibility of formation of Continuous solid solutions based on Semiconductors and Fe(Co,Ni)-V, Fe(Co,Ni)-VI compounds

机译:基于半导体和Fe(CO,Ni)-V,Fe(Co,Ni)-Vi化合物的连续固体溶液形成的可能性

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Possibility of formation of continuous semiconductor solid solutions (CSSS) based on IV_2, III-V, II-VI and Fe(Co, Ni)-V, Fe(Co, Ni)-VI compounds is substantiated. All cases of the formation of(IV_2)_(1-x)(Fe-V)_x, (IV_2)_(1-x)(Fe-VI)_x, (IV_2)_(1-x)(Co-V)_x, (IV_2)_(1-x)(Co-VI)_x, (III-V)_(1-x)(Fe-V)_x, (II-VI)_(1-x)(Fe-V)_x and analogous CSSS are predicted. Subnano-dwfects formed in IV_2, III-V, II-VI semiconductor due to presence of the molecules of Fe(Co, Ni)-V, Fe(Co, Ni)-VI impurities are considered as a quantum dots and their possible energy levels in the band gap of solvent semiconductor compounds are discussed.
机译:基于IV_2,III-V,II-VI和Fe(CO,Ni)-V,Fe(CO,Ni)-Vi化合物的形成形成连续半导体固溶体(CSS)的可能性。所有情况(IV_2)_(1-x)(Fe-V)_x,(IV_2)_(1-x)(Fe-vi)_x,(IV_2)_(1-x)(co- v)_x,(iv_2)_(1-x)(co-vi)_x,(iii-v)_(1-x)(fe-v)_x,(ii-vi)_(1-x)(预测FE-V)_x和类似CSSS。由于存在Fe(CO,Ni)-V,Fe(CO,Ni)-Vi杂质分子的存在,在IV_2,III-V,II-VI半导体中形成的Subnano-DWECTS被认为是量子点及其可能的能量讨论了溶剂半导体化合物的带隙的水平。

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