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Sub-nm Topography Measurement by Deflectometry: Flatness Standard and Wafer Nanotopography

机译:通过偏转测量的子NM形貌测量:平坦度标准和晶片纳米术

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We have built a novel scanning facility based on ESAD (Extended Shear Angle Difference) deflectometry for the ultra-precise and traceable measurement of large near-flat and slightly curved optical surfaces. A primary application of the device is to establish the improved standard for straightness and flatness with sub-nanometer accuracy at PTB. Transfer standards then allow to calibrate optical devices, e.g., interferometers and wafer mappers, with high accuracy. The measurement principle is based on the analysis of differences of reflection angles obtained at surface points with large lateral displacements (shears). The ESAD principle minimizes error influences and is in first order independent of stage errors and wholebody movements of the specimen. ESAD scanning does not rely on external reference surfaces of matched topography and allows an accurate calibration of the angle measuring device. The measurands are directly traceable to the SI units of angle and length.
机译:我们已经基于ESAD(扩展剪切角差)的新颖扫描设施,用于超精密和可追踪的大型近乎横向和略微弯曲的光学表面的可追踪测量。该装置的主要应用是在PTB下建立具有子纳米精度的直线度和平坦度的改进标准。然后,转移标准允许校准光学器件,例如干涉仪和晶片映射器,高精度。测量原理基于在具有大横向位移(剪切)的表面点处获得的反射角度的差异分析。 ESAD原则最小化误差影响,并按照标本的阶段误差和整体移动,以一流的顺序。 ESAD扫描不依赖于匹配的地形的外部参考表面,并允许精确校准角度测量装置。测量标准直接可追溯到角度和长度的SI单位。

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