REDUCTION OF IGBT SWITCHING LOSSES WITH A NEW HIGH VOLTAGE BUSBAR DESIGN

摘要

In this paper a new high voltage busbar design is presented. This design consists in adding a high permittivity insulating zone able to mitigate voltage slope and a small planar ferrite core that influence current slope. These actions reduce strongly the peak power in the IGBT during switching and the energy lost. This design also improves convertor EMI.