Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon

摘要

Single crystalline silicon supersaturated with sulfur was prepared by ion implantation followed by pulsed laser melting and rapid solidification. A strong and broad optical absorption band and free-carrier absorption appeared for this sample around 0.5 eV and below 0.2 eV, respectively. A possible candidate for the origin of the 0.5 eV band is the formation of an impurity band by supersaturated doping.