Post-annealing Effects of CuInSe_(2)(CIS) Absorber Layer at Thin Film Solar Cells with Compound Semiconductor Prepared by Co-sputtering Method

摘要

In this study, we investigated the electrical and structural properties of CuInSe_(2)(CIS) absorber layer with various post-annealing temperatures in thin-film solar cells prepared by co-sputtering method. The CIS film annealed at 550 deg C compared with the films without and with annealing temperatures below 550 deg C has the main growth peaks of chalcopyrite-like structure with CuInSe_(2) (112), CuInSe_(2) (220/204), and CuInSe_(2) (312/116), which resulted in increase of grain sizes and the improvement of crystallinity from the results of full width half maximum (FWHM) values and the intensity of peaks. And also, the carrier concentration and the mobility of the CIS thin film annealed at 550 deg C were increased compared with the film without thermal treatment. Particularly, we suggest that the post-annealing of the CIS absorber layer at an optimized temperature can be applied for improving the device efficiency at the thin-film solar cells because the resistivity of the film annealed at 550 deg C was decreased about 10~(-2) order compared with the film without post-annealing.