Carrier Escape Dynamics in Multilayered Self-Assembled InAs/GaAs Quantum Dots

摘要

We report photocurrent (PC) and photoluminescence (PL) investigations of carrier escape dynamics in multilayered InAs/GaAs self-assembled quantum dots. Unusual plateau of PL intensity versus bias voltage and nonlinear dependence of PC on the laser excitation power have been observed. The former is attributed to an accumulation of holes trapped in quantum dots (QDs), while the latter is due to the interplay between the coupling of the same layer QDs and tunneling through the ones located at different layer.